- 您现在的位置：买卖IC网 > Sheet目录511 > SI5915DC-T1-GE3 (Vishay Siliconix)MOSFET 2P-CH 8V 3.4A 1206-8
Si5915DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.3
0.2
0.1
0.0
- 0.1
- 0.2
I D = 250 μA
50
40
30
20
10
0
- 50
- 25
0
25
50
75
100
125
150
10 -4
10 -3
10 -2
10 -1
1
10
100
600
T J - Temperature ( °C)
Threshold Voltage
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P DM
t 1
t 2
0.01
0.02
Single Pulse
t 1
1. Duty Cycle, D =
t 2
2. Per Unit Base = R thJA = 90 ° C/W
3. T JM -- T A = P DM Z thJA(t)
4. Surface Mounted
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70693 .
www.vishay.com
4
Document Number: 70693
S10-0936-Rev. C, 19-Apr-10
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI5933CDC-T1-E3
MOSFET P-CH 20V 1206-8
SI5933DC-T1-GE3
MOSFET DUAL P-CH 20V 2.7A 1206-8
SI5935DC-T1-GE3
MOSFET DUAL P-CH 20V 1206-8
SI5943DU-T1-GE3
MOSFET DUAL P-CH 12V 6A 8PWRPAK
SI5975DC-T1-GE3
MOSFET 2P-CH 12V 3.1A CHIPFET
SI5980DU-T1-GE3
MOSFET N-CH 100V PPAK CHIPFET
SI6404DQ-T1-GE3
MOSFET N-CH 30V 8.6A 8TSSOP
SI6413DQ-T1-E3
MOSFET P-CH 20V 7.2A 8TSSOP
相关代理商/技术参数
SI5920DC
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 1.5-V (G-S) MOSFET
SI5920DC-T1-E3
功能描述:MOSFET 8.0V 4.0A 3.12W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5920DC-T1-GE3
功能描述:MOSFET N-CH 8V 1206-8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SI5933CDC
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 20-V (D-S) MOSFET
SI5933CDC-T1-E3
功能描述:MOSFET 20V 3.7A 2.8W 144mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5933CDC-T1-GE3
功能描述:MOSFET 20V 3.7A 2.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI5933DC
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual P-Channel 1.8-V (G-S) MOSFET
SI5933DC-T1
功能描述:MOSFET 20V 3.6A 2.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
